17882215. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Seonhaeng Lee of Suwon-si (KR)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17882215 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The present disclosure relates to memory devices and their manufacturing methods. In one embodiment, the memory device includes a memory cell array, three dummy capacitors, and gate structures formed on a substrate.
- The memory cell array consists of gate structures, first active regions, gate insulating layers, and cell capacitors.
- The first and second dummy capacitors are positioned adjacent to the memory cell array in a second direction and extend in a first direction and in the vertical direction.
- The third dummy capacitor extends in the second direction and the vertical direction and is placed adjacent to the memory cell array in the first direction.
- The memory cell array is located between the first and second dummy capacitors.
Potential applications of this technology:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Storage devices in data centers and servers.
- Embedded memory in various integrated circuits.
Problems solved by this technology:
- Improves the performance and reliability of memory devices.
- Reduces the interference between memory cells.
- Enhances the overall efficiency of the memory device.
Benefits of this technology:
- Increased storage capacity and faster data access.
- Improved data retention and endurance.
- Enhanced manufacturing process and yield.
Original Abstract Submitted
The present disclosure refers to memory devices and manufacturing methods thereof. In an embodiment, a memory device includes a memory cell array, a first dummy capacitor, a second dummy capacitor, and a third dummy capacitor. The memory cell array includes gate structures formed on a substrate, first active regions adjacent to the gate structures, gate insulating layers disposed between the gate structures and the first active regions, and cell capacitors connected to the first active regions. The first and second dummy capacitors extend in a first direction and in the vertical direction, and are disposed to be adjacent to the memory cell array in a second direction. The third dummy capacitor extends in the second direction and the vertical direction and is disposed to be adjacent to the memory cell array in the first direction. The memory cell array is disposed between the first and second dummy capacitors.
