17879049. SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Minyoung Kwon of Gwangmyeong-si (KR)
Youngmin Lee of Hwaseong-si (KR)
Sungdong Cho of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17879049 titled 'SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, an insulation layer, and two via structures of different sizes at the same vertical level. The first via structure has a smaller diameter than the second via structure. The first via structure has an undercut region on its sidewall that protrudes towards its center. The outer sidewall of the second via structure is in contact with either the substrate or the insulation layer above the undercut region.
- A semiconductor device with two via structures of different sizes at the same vertical level is provided.
- The first via structure has a smaller diameter than the second via structure.
- The sidewall of the first via structure has an undercut region that protrudes towards its center.
- The outer sidewall of the second via structure is in contact with either the substrate or the insulation layer above the undercut region.
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
Problems Solved
- Allows for the integration of different-sized via structures at the same vertical level.
- Provides a method to create an undercut region on the sidewall of a via structure.
- Enables better contact between the outer sidewall of a via structure and the substrate or insulation layer.
Benefits
- Increased flexibility in designing semiconductor devices.
- Improved electrical connectivity between different layers of the device.
- Enhanced performance and functionality of integrated circuits and other semiconductor devices.
Original Abstract Submitted
A semiconductor device including a semiconductor substrate, an interlayer insulation layer on the semiconductor substrate, a first via structure passing through the semiconductor substrate and the interlayer insulation layer and having a first diameter, and a second via structure passing through the semiconductor substrate and the interlayer insulation layer, the second via structure having a second diameter greater than the first diameter, at a same vertical level may be provided. A sidewall of the first via structure may include at least one undercut region horizontally protruding toward a center of the first via structure, and an outer sidewall of the second via structure may be in contact with either the semiconductor substrate or the interlayer insulation layer at an area above the undercut region.
