17877387. INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kai-Fang Cheng of Hsinchu (TW)

Cherng-Shiaw Tsai of Hsinchu (TW)

Cheng-Chin Lee of Hsinchu (TW)

Yen-Ju Wu of Hsinchu (TW)

Hsiao-Kang Chang of Hsinchu (TW)

INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17877387 titled 'INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The abstract of the patent application describes an interconnection structure that includes multiple layers, including an interlayer dielectric (ILD) layer, a metal via, and a metal wire. The ILD layer contains silicon carbon nitride.

  • The interconnection structure includes an ILD layer, a metal via, and a metal wire.
  • The ILD layer is made of silicon carbon nitride.
  • The metal via is located within the ILD layer.
  • The metal wire is positioned over the metal via within the ILD layer.
  • The metal wire is electrically connected to the metal via.

Potential Applications:

  • Integrated circuits and semiconductor devices.
  • Electronic devices requiring efficient interconnections.

Problems Solved:

  • Provides a reliable and efficient interconnection structure.
  • Helps in reducing signal delay and improving overall performance.
  • Enhances the electrical connectivity between different components.

Benefits:

  • Improved reliability and performance of integrated circuits.
  • Enhanced electrical connectivity and signal transmission.
  • Enables the development of smaller and more efficient electronic devices.


Original Abstract Submitted

An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.

Retrieved from "http://wikipatents.org/index.php?title=17877387._INTERCONNECTION_STRUCTURE_AND_METHOD_FOR_FABRICATING_THE_SAME_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=31676"