17877350. INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kai-Fang Cheng of Hsinchu (TW)
Cheng-Chin Lee of Hsinchu (TW)
Hsin-Yen Huang of Hsinchu (TW)
Hsiao-Kang Chang of Hsinchu (TW)
INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17877350 titled 'INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate and an interconnect layer. The interconnect layer consists of a dielectric layer, an interconnect structure, and an etch stop layer. The etch stop layer is located on the lower end surface of the interconnect structure and is made of silicon carbonitride (SiCN) with specific atomic percentages of silicon, carbon, and nitrogen.
- The interconnect layer in the semiconductor device is made up of multiple layers, including a dielectric layer, an interconnect structure, and an etch stop layer.
- The etch stop layer is composed of silicon carbonitride (SiCN) with specific atomic percentages of silicon, carbon, and nitrogen.
- The silicon content (x) in the etch stop layer ranges from 30% to 60%.
- The carbon content (y) in the etch stop layer ranges from 25% to 60%.
- The nitrogen content (z) in the etch stop layer ranges from 10% to 20%.
- The sum of x, y, and z is always 100%.
Potential applications of this technology:
- Semiconductor devices: This innovation can be used in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
- Electronics manufacturing: The technology can be applied in the manufacturing process of electronic devices to improve their performance and reliability.
Problems solved by this technology:
- Etching control: The etch stop layer helps in controlling the etching process during the fabrication of semiconductor devices, ensuring precise and accurate patterning.
- Interconnect reliability: The use of silicon carbonitride as the etch stop layer enhances the reliability of interconnect structures by preventing undesired etching and damage.
Benefits of this technology:
- Improved device performance: The precise control of etching process and enhanced interconnect reliability contribute to improved performance of semiconductor devices.
- Enhanced device reliability: The use of silicon carbonitride as the etch stop layer improves the reliability and longevity of semiconductor devices.
- Manufacturing efficiency: The technology can potentially improve the efficiency of electronic device manufacturing processes by providing better etching control and reducing the risk of damage.
Original Abstract Submitted
A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes a dielectric layer, an interconnect structure disposed in the dielectric layer, and an etch stop layer which is disposed on a lower end surface of the interconnect structure and which includes silicon carbonitride represented by a general formula of SiCN, wherein x is a silicon content ranging from 30 atomic % to 60 atomic %, y is a carbon content ranging from 25 atomic % to 60 atomic %, z is a nitrogen content ranging from 10 atomic % to 20 atomic %, and a sum of x, y, and z is 100 atomic %.
