17876920. Thin-Film Transistors For Detecting Miniature Targets simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Thin-Film Transistors For Detecting Miniature Targets

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wei Lee of Hsinchu City (TW)

Chung-Liang Cheng of Changhua County (TW)

Pei-Wen Liu of Hsinchu City (TW)

Ke-Wei Su of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Thin-Film Transistors For Detecting Miniature Targets - A simplified explanation of the abstract

This abstract first appeared for US patent application 17876920 titled 'Thin-Film Transistors For Detecting Miniature Targets

Simplified Explanation

The abstract describes a patent application for an interconnect structure that is placed over a semiconductor substrate. The structure consists of multiple interconnect layers and includes two thin-film transistors (TFTs) that extend vertically through some of the interconnect layers. An opening is created between the two TFTs within the interconnect structure, and a sensing film is placed on the bottom and side surfaces of the opening.

  • The interconnect structure is placed over a semiconductor substrate.
  • It includes multiple interconnect layers.
  • Two thin-film transistors (TFTs) are vertically extended through some of the interconnect layers.
  • An opening is formed between the two TFTs within the interconnect structure.
  • A sensing film is applied to the bottom and side surfaces of the opening.

Potential Applications:

  • This technology can be used in the manufacturing of electronic devices such as integrated circuits and microprocessors.
  • It can improve the performance and functionality of these devices by providing a more efficient interconnect structure.

Problems Solved:

  • The interconnect structure solves the problem of efficiently connecting different components within a semiconductor substrate.
  • It allows for the vertical extension of thin-film transistors, enabling better integration and connectivity.

Benefits:

  • The interconnect structure improves the overall performance and functionality of electronic devices.
  • It enhances the efficiency of interconnectivity between components within a semiconductor substrate.
  • The use of thin-film transistors and sensing films provides more accurate and reliable sensing capabilities.



Original Abstract Submitted

An interconnect structure is disposed over a semiconductor substrate. The interconnect structure includes a plurality of interconnect layers. A first thin-film transistor (TFT) and a second TFT disposed over the semiconductor substrate. The first TFT and the second TFT each vertically extend through at least a subset of the interconnect layers. An opening is formed in the interconnect structure. The opening is disposed between the first TFT and the second TFT. A sensing film is disposed over a bottom surface and side surfaces of the opening.