17876819. Miniature-Target-Detecting Transistors With Different Gate Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Miniature-Target-Detecting Transistors With Different Gate Structures
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Katherine H. Chiang of Hsinchu City (TW)
Pei-Wen Liu of Hsinchu City (TW)
Ke-Wei Su of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Miniature-Target-Detecting Transistors With Different Gate Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 17876819 titled 'Miniature-Target-Detecting Transistors With Different Gate Structures
Simplified Explanation
The abstract describes a patent application for a substrate with multiple transistors and a structure on one side, and a sensing film on the other side. The transistors have different gate compositions and are arranged in a specific order. The structure has openings aligned with each transistor, and the sensing film is designed to attach to specific miniature targets.
- The patent application describes a substrate with transistors and a structure on one side, and a sensing film on the other side.
- The transistors have different gate compositions and are arranged in a specific order.
- The structure has openings aligned with each transistor.
- The sensing film is designed to attach to specific miniature targets.
Potential Applications:
- This technology could be used in electronic devices that require multiple transistors and sensing capabilities.
- It could be applied in the field of biotechnology for detecting and analyzing miniature targets.
Problems Solved:
- The arrangement of transistors with different gate compositions allows for improved functionality and performance.
- The structure with aligned openings provides precise positioning for the sensing film.
Benefits:
- The different gate compositions of the transistors enhance their individual capabilities and overall device performance.
- The precise alignment of the structure openings ensures accurate attachment of the sensing film to specific targets.
- The technology enables the development of more advanced electronic devices and biotechnological applications.
Original Abstract Submitted
A substrate has a first side and a second side opposite the first side. A first transistor has a first gate, a second transistor has a second gate, and a third transistor has a third gate. The first gate, the second gate, and the third gate are each disposed over the first side of the substrate. The second gate is disposed between the first gate and the third gate. The first gate and the third gate have different material compositions. A structure is disposed over the second side of the substrate. The structure includes a first opening aligned with the first transistor, a second opening aligned with the second transistor, and a third opening aligned with the third transistor. A sensing film is disposed over the second side of the substrate. The sensing film is configured to attach to one or more predefined miniature targets.
