17875908. VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

VOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

JAE PIL Lee of SEOUL (KR)

KWANG SOOK Noh of SUWON-SI (KR)

VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17875908 titled 'VOLATILE MEMORY DEVICE

Simplified Explanation

The abstract describes a volatile memory device with a reduced area. Here are the key points:

  • The memory device includes a row decoder, a column decoder, a cell region, and a peripheral circuit region.
  • The row decoder and column decoder extend in different directions.
  • The cell region is located between the row decoder and column decoder and includes a sense amplifier and a bit line connected to the sense amplifier.
  • The peripheral circuit region is separate from the cell region and includes a complementary bit line connected to the sense amplifier.
  • The sense amplifier is designed to perform read/write operations on a memory cell connected to the bit line using the complementary bit line.

Potential applications of this technology:

  • This memory device can be used in various electronic devices such as computers, smartphones, tablets, and other devices that require volatile memory.
  • It can be integrated into data storage systems, allowing for faster and more efficient data access and manipulation.

Problems solved by this technology:

  • The reduced area of the memory device helps in optimizing space utilization in electronic devices, allowing for more compact designs.
  • The separate peripheral circuit region helps in reducing interference and noise, improving the overall performance and reliability of the memory device.

Benefits of this technology:

  • The reduced area of the memory device allows for more efficient use of space in electronic devices, enabling smaller and sleeker designs.
  • The separate peripheral circuit region helps in minimizing interference and noise, leading to improved performance and reliability.
  • The read/write operations performed by the sense amplifier using the complementary bit line enhance the speed and efficiency of data access and manipulation.


Original Abstract Submitted

A volatile memory device having a reduced area may include; a row decoder extending in a first direction, a column decoder extending in a second direction, a cell region between the row decoder and the column decoder and including a first sense amplifier and a first bit line connected to the first sense amplifier, and a first peripheral circuit region spaced apart from the cell region in the first direction and including includes a first complementary bit line connected to the first sense amplifier. The first sense amplifier may be configured to perform a read/write operation in relation to a first memory cell connected to the first bit line using the first complementary bit line.

Retrieved from "http://wikipatents.org/index.php?title=17875908._VOLATILE_MEMORY_DEVICE_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=21999"