17875625. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kai-Fang Cheng of Hsinchu (TW)

Hsiao-Kang Chang of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17875625 titled 'SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor structure described in the patent application includes a base structure with a substrate, electrically conductive features, and an isolation structure. The electrically conductive features are spaced apart from each other, and the isolation structure includes an inter-metal dielectric feature, an air gap layer, and a sustaining feature.

  • The base structure of the semiconductor includes a substrate.
  • The electrically conductive features are placed on the base structure and are separated from each other.
  • The isolation structure is also placed on the base structure.
  • The isolation structure includes an inter-metal dielectric feature that horizontally interconnects the electrically conductive features.
  • A first air gap layer is present in the isolation structure and surrounds the electrically conductive features.
  • A first sustaining feature horizontally interconnects the electrically conductive features and is positioned between the inter-metal dielectric feature and the first air gap layer.

Potential applications of this technology:

  • This semiconductor structure can be used in various electronic devices such as integrated circuits, microprocessors, and memory devices.
  • It can improve the performance and efficiency of these electronic devices by providing better isolation and interconnection of electrically conductive features.

Problems solved by this technology:

  • The semiconductor structure solves the problem of providing effective isolation and interconnection of electrically conductive features on a base structure.
  • It addresses the challenge of reducing interference and crosstalk between the electrically conductive features.

Benefits of this technology:

  • The semiconductor structure offers improved electrical performance and reliability.
  • It enables higher integration density and miniaturization of electronic devices.
  • It reduces power consumption and enhances overall device efficiency.


Original Abstract Submitted

A semiconductor structure includes a base structure, a plurality of electrically conductive features disposed on the base structure, and an isolation structure disposed on the base structure. The base structure includes a substrate. The electrically conductive features are spaced apart from each other. The isolation structure includes a first inter-metal dielectric feature extending horizontally to interconnect the electrically conductive features, a first air gap layer disposed in the isolation structure and around the electrically conductive features, and a first sustaining feature extending horizontally to interconnect the electrically conductive features and disposed between the first inter-metal dielectric feature and the first air gap layer. Methods for manufacturing the semiconductor structure are also disclosed.

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