17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Junghwan Um of Seongnam-si (KR)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17874738 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS

Simplified Explanation

The abstract describes a method of manufacturing an integrated circuit (IC) device. Here is a simplified explanation of the abstract:

• The method involves forming an etching target structure on a substrate.
• An etching mask pattern is then formed on the etching target structure, which has an opening.
• A portion of the etching target structure is etched through the opening to create a first hole.
• A conductive polymer layer is applied to cover the etching target structure inside the first hole.
• Another portion of the etching target structure is etched through the first hole, while the conductive polymer layer protects the structure, to create a second hole that extends from the first hole towards the substrate.

Potential applications of this technology:

• Manufacturing integrated circuit devices.
• Fabricating complex circuitry with precise hole formations.

Problems solved by this technology:

• Provides a method for creating holes in an etching target structure with improved precision and control.
• Protects the etching target structure during the etching process, preventing damage or unintended modifications.

Benefits of this technology:

• Enables the manufacturing of integrated circuit devices with intricate and precise hole formations.
• Enhances the reliability and performance of the integrated circuit devices.
• Reduces the risk of damage or unintended modifications during the manufacturing process.

Original Abstract Submitted

A method of manufacturing an integrated circuit (IC) device including forming an etching target structure on a substrate, forming an etching mask pattern having an opening on the etching target structure, etching a portion of the etching target structure through the opening to form a first hole in the etching target structure, forming a conductive polymer layer to cover the etching target structure inside the first hole, and etching another portion of the etching target structure through the first hole, in a state in which the etching target structure is covered by the conductive polymer layer inside the first hole, to form a second hole in the etching target structure and extending from the first hole toward the substrate may be provided.