17874475. DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Vladimir Vsevolodovich Protopopov of Suwon-si (KR)

Vasily Grigorievich Pashkovskiy of Suwon-si (KR)

Chansoo Kang of Hwaseong-si (KR)

Youngdo Kim of Hwaseong-si (KR)

Hoonseop Kim of Suwon-si (KR)

Sangki Nam of Seongnam-si (KR)

Sejin Oh of Hwaseong-si (KR)

Changsoon Lim of Hwaseong-si (KR)

DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17874475 titled 'DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

Simplified Explanation

The patent application describes a device for measuring the density of plasma using two sensors - a microwave sensor and an optical sensor.

  • The first sensor measures the microwave spectrum of the reflection parameter of plasma using a probe made of conductive material in a flat plate shape.
  • The second sensor detects the optical signal generated from the plasma and does so through the probe of the first sensor.

Potential Applications

This technology has potential applications in various fields where plasma density measurement is required, such as:

  • Plasma physics research
  • Fusion energy research
  • Semiconductor manufacturing
  • Plasma-based material processing

Problems Solved

The device addresses the following problems associated with plasma density measurement:

  • Traditional methods may be complex and require multiple sensors.
  • Existing devices may not provide accurate and reliable measurements.
  • Lack of integration between microwave and optical measurements.

Benefits

The device offers several benefits over existing solutions:

  • Simplified measurement process with integrated microwave and optical sensors.
  • Accurate and reliable measurement of plasma density.
  • Potential for real-time monitoring and control of plasma-based processes.
  • Cost-effective solution compared to traditional methods.


Original Abstract Submitted

A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.