17874475. DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
Organization Name
Inventor(s)
Vladimir Vsevolodovich Protopopov of Suwon-si (KR)
Vasily Grigorievich Pashkovskiy of Suwon-si (KR)
Chansoo Kang of Hwaseong-si (KR)
Youngdo Kim of Hwaseong-si (KR)
Sangki Nam of Seongnam-si (KR)
Changsoon Lim of Hwaseong-si (KR)
DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17874475 titled 'DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
Simplified Explanation
The patent application describes a device for measuring the density of plasma using two sensors - a microwave sensor and an optical sensor.
- The first sensor measures the microwave spectrum of the reflection parameter of plasma using a probe made of conductive material in a flat plate shape.
- The second sensor detects the optical signal generated from the plasma and does so through the probe of the first sensor.
Potential Applications
This technology has potential applications in various fields where plasma density measurement is required, such as:
- Plasma physics research
- Fusion energy research
- Semiconductor manufacturing
- Plasma-based material processing
Problems Solved
The device addresses the following problems associated with plasma density measurement:
- Traditional methods may be complex and require multiple sensors.
- Existing devices may not provide accurate and reliable measurements.
- Lack of integration between microwave and optical measurements.
Benefits
The device offers several benefits over existing solutions:
- Simplified measurement process with integrated microwave and optical sensors.
- Accurate and reliable measurement of plasma density.
- Potential for real-time monitoring and control of plasma-based processes.
- Cost-effective solution compared to traditional methods.
Original Abstract Submitted
A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.
- SAMSUNG ELECTRONICS CO., LTD.
- Vladimir Vsevolodovich Protopopov of Suwon-si (KR)
- Vasily Grigorievich Pashkovskiy of Suwon-si (KR)
- Chansoo Kang of Hwaseong-si (KR)
- Youngdo Kim of Hwaseong-si (KR)
- Hoonseop Kim of Suwon-si (KR)
- Sangki Nam of Seongnam-si (KR)
- Sejin Oh of Hwaseong-si (KR)
- Changsoon Lim of Hwaseong-si (KR)
- H01J37/32