17874400. ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Hokyun Rho of Jeongeup-si (KR)
ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17874400 titled 'ELECTRODE STRUCTURE INCLUDING METAL AND HEAT DISSIPATION LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The abstract describes a semiconductor device with a substrate, a heat dissipation layer, and a metal layer. The heat dissipation layer is made of carbon atoms and can be graphene, nanotubes, or a diamond structure. The width of the heat dissipation layer is greater than the width of the metal layer.
- The semiconductor device includes a substrate, a heat dissipation layer, and a metal layer.
- The heat dissipation layer is made of carbon atoms and can be graphene, nanotubes, or a diamond structure.
- The heat dissipation layer extends in a first direction, while the metal layer extends in the same direction but with a smaller width.
- The width of the heat dissipation layer in a second direction is greater than the width of the metal layer in the same direction.
Potential Applications
- High-performance electronic devices
- Power electronics
- Integrated circuits
- Optoelectronics
Problems Solved
- Improved heat dissipation in semiconductor devices
- Enhanced performance and reliability of electronic components
- Reduction of thermal stress and hotspots
Benefits
- Efficient heat dissipation
- Increased device lifespan
- Improved overall performance and reliability
- Reduction in thermal management challenges
Original Abstract Submitted
A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipation layer and extends in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
