17873130. PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chun-Chih Ho of Taichung City (TW)

Ching-Yu Chang of Yilang County (TW)

Chin-Hsiang Lin of Hsinchu (TW)

PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17873130 titled 'PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN

Simplified Explanation

The patent application describes a photoresist composition that includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive can be one or more of several types of polymers with specific substituents. Another photoresist composition includes a polymer resin with a conjugated moiety and a photoactive compound.

  • The photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin.
  • The conjugated resist additive can be one or more types of polymers with specific substituents.
  • Another composition includes a polymer resin with a conjugated moiety and a photoactive compound.

Potential applications of this technology:

  • Semiconductor manufacturing
  • Lithography processes
  • Microelectronics fabrication

Problems solved by this technology:

  • Improving the performance and resolution of photoresist materials
  • Enhancing the sensitivity and efficiency of lithography processes

Benefits of this technology:

  • Increased accuracy and precision in semiconductor manufacturing
  • Higher resolution and better image quality in microelectronics fabrication
  • Improved efficiency and cost-effectiveness in lithography processes


Original Abstract Submitted

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

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