17870805. THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR simplified abstract (Samsung Display Co., Ltd.)

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THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

Organization Name

Samsung Display Co., Ltd.

Inventor(s)

Kyoung Won Lee of Seoul (KR)

Eun Hye Ko of Yongin-si (KR)

Yeon Hong Kim of Hwaseong-si (KR)

Eun Hyun Kim of Suwon-si (KR)

Hyung Jun Kim of Seoul (KR)

Sun Hee Lee of Seoul (KR)

Jun Hyung Lim of Seoul (KR)

THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17870805 titled 'THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

Simplified Explanation

The abstract describes a thin-film transistor design that includes various layers and areas for improved performance. Here are the bullet points explaining the patent/innovation:

  • The thin-film transistor includes a light-shielding layer on a substrate.
  • An oxygen supply layer, containing a metal oxide, is placed on top of the light-shielding layer.
  • A buffer layer is then added to cover the oxygen supply layer.
  • An active layer is placed on the buffer layer, which includes a channel area overlapping the light-shielding layer.
  • The active layer also has a first electrode area and a second electrode area on opposing sides of the channel area.
  • A gate insulating layer is added on top of the channel area of the active layer.

Potential applications of this technology:

  • Thin-film transistors are commonly used in electronic devices such as displays, sensors, and integrated circuits.
  • This improved design could enhance the performance and efficiency of these devices, leading to better image quality, faster response times, and lower power consumption.

Problems solved by this technology:

  • The light-shielding layer helps prevent unwanted light from affecting the performance of the thin-film transistor.
  • The oxygen supply layer, containing a metal oxide, can provide stability and improve the overall functionality of the transistor.
  • The buffer layer helps protect the underlying layers and provides a smooth surface for the active layer.

Benefits of this technology:

  • The improved design can lead to enhanced performance and efficiency of electronic devices.
  • The light-shielding layer helps reduce interference from external light sources, resulting in better image quality.
  • The oxygen supply layer and buffer layer contribute to the stability and longevity of the thin-film transistor.
  • The overall design allows for better control and modulation of the transistor's operation.


Original Abstract Submitted

A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.