17867962. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

JAEDUK Lee of Seongnam-si (KR)

JOONAM Kim of Hwaseong-si (KR)

SEJUN Park of Yongin-si (KR)

RAEYOUNG Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17867962 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The patent application describes semiconductor devices that include a peripheral circuit structure, a memory cell block, and bit lines. The memory cell block consists of strings stacked vertically, each containing select transistors and memory cell transistors. The bit lines are connected to multiple strings.

• The semiconductor devices have a peripheral circuit structure, memory cell block, and bit lines.
• The memory cell block is made up of vertically stacked strings.
• Each string includes select transistors and memory cell transistors.
• The bit lines are connected to multiple strings.
• The lower select transistors in the strings have different vertical levels for their gate electrodes.

Potential applications of this technology:

• Memory devices in electronic devices such as smartphones, tablets, and computers.
• Data storage in cloud computing and data centers.
• High-speed data processing in artificial intelligence and machine learning systems.

Problems solved by this technology:

• Efficient use of space in semiconductor devices by stacking memory cell strings vertically.
• Improved performance and reliability of memory devices with select transistors and memory cell transistors in each string.
• Simplified circuit design by connecting multiple strings to a single set of bit lines.

Benefits of this technology:

• Increased memory capacity in semiconductor devices due to vertical stacking of memory cell strings.
• Faster data access and processing with select transistors and memory cell transistors in each string.
• Cost-effective production of semiconductor devices with simplified circuit design and reduced space requirements.

Original Abstract Submitted

Semiconductor devices are provided. The semiconductor devices may include a peripheral circuit structure, a memory cell block arranged on the peripheral circuit structure and including strings, each of which includes a lower select transistor, memory cell transistors, and an upper select transistor connected in series and stacked in a vertical direction, and bit lines on the memory cell block. The bit lines may include a first bit line electrically connected to first to third strings of the strings. The lower select transistors of the first to third strings include first to third lower select gate electrodes, respectively. The second lower select gate electrode may be arranged at a different vertical level from the first lower select gate electrode, and the third lower select gate electrode may be arranged at the same vertical level as the first lower select gate electrode.