17866917. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Anthony Dongick Lee of Hwaseong-si (KR)

Sang Cheol Na of Seoul (KR)

Seo Woo Nam of Seoul (KR)

Ki Chul Park of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17866917 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes two wiring structures made of different materials. The first wiring structure has a larger width on its lowest surface in a specific direction, while the second wiring structure is smaller in width on its lowest surface and is spaced apart from the first structure in the same direction. The highest surface of the first structure has a width smaller than the lowest surface, and the highest surface of the second structure has a width smaller than its lowest surface in the same direction.

  • The semiconductor device consists of two wiring structures made of different materials.
  • The first wiring structure has a larger width on its lowest surface in a specific direction.
  • The second wiring structure is smaller in width on its lowest surface and is spaced apart from the first structure in the same direction.
  • The highest surface of the first structure has a width smaller than its lowest surface.
  • The highest surface of the second structure has a width smaller than its lowest surface in the same direction.

Potential Applications

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Power electronics

Problems Solved

  • Efficient use of space in semiconductor devices
  • Improved performance and functionality of integrated circuits
  • Reduction in power consumption and heat generation

Benefits

  • Higher integration density of components
  • Enhanced electrical performance
  • Improved thermal management
  • Increased functionality and efficiency of semiconductor devices


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device comprises a first wiring structure which includes a first material, and has a first width on a lowest surface in a first direction and a second wiring structure which includes a second material, is spaced apart from the first wiring structure in the first direction, and has a second width smaller than the first width on a lowest surface in the first direction, wherein a highest surface of the first wiring structure has a third width smaller than the first width in the first direction, and a highest surface of the second wiring structure has a fourth width smaller than the second width in the first direction.