17865478. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Youngtak Kim of Hwaseong-si (KR)
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17865478 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a method of fabricating an image sensor using a semiconductor substrate. Here are the key points:
- The method involves using a mask pattern on the semiconductor substrate to create an opening.
- A first fluid is supplied in the opening, which is then vaporized to remove it from the substrate.
- An etching process is performed using the mask pattern to create a pixel isolation trench that extends from one surface of the substrate to the other.
- A second fluid is supplied in the trench, which is then replaced with a third fluid.
- The third fluid has a lower surface tension than the first fluid and is vaporized.
Potential applications of this technology:
- Image sensors are used in various devices such as digital cameras, smartphones, and surveillance systems. This method can be applied to fabricate image sensors for these devices, improving their performance and quality.
Problems solved by this technology:
- Fabricating image sensors requires precise and efficient processes. This method provides a simplified and effective way to create pixel isolation trenches, which are crucial for isolating individual pixels and improving image quality.
Benefits of this technology:
- The method allows for the fabrication of image sensors with improved pixel isolation, leading to better image quality and reduced crosstalk between pixels.
- It simplifies the fabrication process by using fluid-based techniques, potentially reducing manufacturing costs and time.
- The use of different fluids with varying surface tensions allows for better control and optimization of the pixel isolation trench formation.
Original Abstract Submitted
A method of fabricating an image sensor includes providing a semiconductor substrate having a first surface and a second surface that are opposite to each other. A mask pattern is formed on the first surface. The mask pattern has an opening. A first fluid is supplied in the opening. The first fluid is vaporized to remove the first fluid on the semiconductor substrate. An etching process is performed using the mask pattern to form a pixel isolation trench extending from the first surface towards the second surface. A second fluid is supplied in the pixel isolation trench. The second fluid is replaced in the pixel isolation trench with a third fluid. The third fluid is vaporized. The third fluid has a surface tension that is lower than a surface tension of the first fluid.
