17864541. PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM
Organization Name
Inventor(s)
Sungyeol Kim of Yongin-si (KR)
Kyungmin Lee of Gwacheon-si (KR)
Seungkyu Lim of Uiwang-si (KR)
PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17864541 titled 'PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM
Simplified Explanation
The abstract describes a plasma processing system that includes a chamber for performing plasma processes on a substrate. The system includes a substrate stage with a circular electrode and at least one annular electrode, an upper electrode, and a power supply for the upper electrode. The system also includes capacitance variators for the circular and annular electrodes, a sensor to acquire electrical signal data, and a controller to determine thin film profiles on the substrate based on the electrical signal data.
- The system includes a chamber for performing plasma processes on a substrate.
- The substrate stage has a circular electrode and at least one annular electrode.
- An upper electrode is provided over the substrate.
- A power supply is used to supply source power to the upper electrode.
- Capacitance variators are used to vary the capacitance of the circular and annular electrodes.
- A sensor is connected to the capacitance variators to acquire electrical signal data.
- A controller is used to determine thin film profiles on the substrate based on the electrical signal data.
- The controller outputs control signals to obtain the desired thin film profiles.
Potential Applications
This technology can be used in various industries and applications, including:
- Semiconductor manufacturing: The system can be used for plasma etching and deposition processes in the fabrication of semiconductor devices.
- Display manufacturing: The system can be used for plasma processes in the production of flat panel displays.
- Solar cell manufacturing: The system can be used for plasma processes in the manufacturing of solar cells.
- MEMS/NEMS fabrication: The system can be used for plasma processes in the fabrication of microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).
Problems Solved
The plasma processing system addresses several challenges in the field of thin film deposition and etching, including:
- Uniformity: The system allows for the control of thin film profiles in different regions of the substrate, ensuring uniformity in the deposition or etching process.
- Precision: The capacitance variators and sensor provide precise control and monitoring of the plasma process, allowing for accurate thin film profile determination.
- Efficiency: The system optimizes the plasma process by adjusting the capacitance of the electrodes, resulting in improved process efficiency and reduced material waste.
Benefits
The plasma processing system offers several benefits over existing technologies:
- Enhanced control: The system provides precise control over the thin film profiles, allowing for the production of high-quality and uniform thin films.
- Improved process efficiency: By adjusting the capacitance of the electrodes, the system optimizes the plasma process, leading to improved process efficiency and reduced production costs.
- Cost savings: The system's ability to obtain desired thin film profiles reduces material waste and increases yield, resulting in cost savings for manufacturers.
- Versatility: The system can be used in various industries and applications, making it a versatile solution for plasma processing needs.
Original Abstract Submitted
a plasma processing system includes a chamber providing a space for performing a plasma process on a substrate, a substrate stage having a seating surface for supporting the substrate, the substrate stage having a circular electrode and at least one annular electrode therein, an upper electrode provided over the substrate, a power supply configured to supply source power to the upper electrode, a first capacitance variator configured to vary a capacitance of the circular electrode based on an inputted first control signal, a second capacitance variator configured to vary a capacitance of the annular electrode based on an inputted second control signal, a sensor connected to the first and second capacitance variators respectively and configured to acquire electrical signal data of the circular electrode and the at least one annular electrode, and a controller configured to determine a thin film profile in first and second regions of the substrate corresponding to the circular electrode and the annular electrode respectively based on the electrical signal data obtained from the sensor, the controller being configured to output the first and second control signals respectively in order to obtain a desired thin film profile.
