17862987. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
CHAN-SIC Yoon of Anyang-si (KR)
GYUHYUN Kil of Hwaseong-si (KR)
JUNG-HOON Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17862987 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The disclosed semiconductor device includes a peripheral word line, a lower dielectric pattern, a contact plug, and a filling pattern.
- The peripheral word line is located on a substrate.
- The lower dielectric pattern covers the peripheral word line and consists of two parts - one covering the lateral surface of the peripheral word line and the other covering the top surface.
- The contact plug is positioned on one side of the peripheral word line and penetrates both parts of the lower dielectric pattern.
- The contact plug includes a contact pad on top of the lower dielectric pattern and a through plug that penetrates both parts.
- The filling pattern is in contact with the second part of the lower dielectric pattern and partially penetrates it.
- Both parts of the lower dielectric pattern are made of the same material.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Memory devices
Problems solved by this technology:
- Provides a structure for efficient electrical connections in a semiconductor device
- Helps to improve the performance and reliability of the device
Benefits of this technology:
- Simplifies the manufacturing process by using the same material for both parts of the lower dielectric pattern
- Enhances the electrical connectivity and reduces resistance in the device
- Increases the overall performance and reliability of the semiconductor device.
Original Abstract Submitted
Disclosed is a semiconductor device comprising a peripheral word line disposed on a substrate, a lower dielectric pattern covering the peripheral word line and including a first part that covers a lateral surface of the peripheral word line and a second part that covers a top surface of the peripheral word line, a contact plug on one side of the peripheral word line and penetrating the first and second parts, and a filling pattern in contact with the second part of the lower dielectric pattern and penetrating at least a portion of the second part. The contact plug includes a contact pad disposed on a top surface of the lower dielectric pattern, and a through plug penetrating the first and second parts. The filling pattern surrounds a lateral surface of the contact pad. The first and second parts include the same material.
