17861577. CAPACITOR, METHOD OF FABRICATING THE CAPACITOR, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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CAPACITOR, METHOD OF FABRICATING THE CAPACITOR, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Changsoo Lee of Seoul (KR)

Sangwoon Lee of Suwon-si (KR)

Yongsung Kim of Suwon-si (KR)

Jinhong Kim of Seoul (KR)

Hyungjun Kim of Suwon-si (KR)

Jooho Lee of Hwaseong-si (KR)

CAPACITOR, METHOD OF FABRICATING THE CAPACITOR, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17861577 titled 'CAPACITOR, METHOD OF FABRICATING THE CAPACITOR, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR

Simplified Explanation

The abstract describes a patent application for a capacitor that includes a perovskite material in its lower electrode, upper electrode, and dielectric layer. It also includes a passivation layer made of SrTiO with a higher content of Ti than Sr.

  • The capacitor includes a perovskite material in its lower electrode, upper electrode, and dielectric layer.
  • The passivation layer is made of SrTiO with a higher content of Ti than Sr.
  • The perovskite material in the capacitor enhances its performance and efficiency.

Potential Applications

  • Energy storage systems
  • Electronic devices
  • Power electronics

Problems Solved

  • Improved performance and efficiency of capacitors
  • Enhanced stability and reliability of electronic devices

Benefits

  • Higher energy storage capacity
  • Increased efficiency and performance
  • Improved stability and reliability of electronic devices


Original Abstract Submitted

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrTiOin which a content of Ti is greater than a content of Sr.