17858552. DIELECTRIC MATERIAL, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE DIELECTRIC MATERIAL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
DIELECTRIC MATERIAL, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE DIELECTRIC MATERIAL
Organization Name
Inventor(s)
Hyeon Cheol Park of Hwaseong-si (KR)
Taewon Jeong of Yongin-si (KR)
DIELECTRIC MATERIAL, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE DIELECTRIC MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17858552 titled 'DIELECTRIC MATERIAL, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE DIELECTRIC MATERIAL
Simplified Explanation
The abstract describes a dielectric material, a device incorporating the material, and a method for preparing the dielectric. The dielectric material is a NaNbO ternary material with a perovskite phase that includes a substitution of a Sm element into a Na site. This substitution results in a high permittivity of 600 or more at 1 kHz and a temperature coefficient of capacitance (TCC) ranging from about -15% to about 15% over a temperature range of -55°C to +200°C.
- The dielectric material is a NaNbO ternary material with a perovskite phase.
- The NaNbO ternary material has a substitution of a Sm element into a Na site.
- The dielectric material has a high permittivity of 600 or more at 1 kHz.
- The dielectric material has a temperature coefficient of capacitance (TCC) ranging from about -15% to about 15%.
- The TCC is maintained over a wide temperature range of -55°C to +200°C.
Potential Applications
- Capacitors
- Energy storage devices
- Electronic components
Problems Solved
- High permittivity and stable TCC over a wide temperature range
- Improved performance and reliability of dielectric materials
Benefits
- High permittivity allows for increased energy storage capacity
- Stable TCC ensures consistent performance over a wide temperature range
- Improved reliability and efficiency of electronic devices
Original Abstract Submitted
Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.
