17858388. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Sangdon Lee of Hwaseong-si (KR)

Joonsung Kim of Suwon-si (KR)

Jiwon Kim of Hwaseong-si (KR)

Jaeho Kim of Suwon-si (KR)

Sukkang Sung of Seongnam-si (KR)

Jong-Min Lee of Yongin-si (KR)

Euntaek Jung of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17858388 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The patent application describes semiconductor devices and electronic systems that include a stack structure with vertically stacked gate electrodes on a substrate. The devices also have selection structures spaced horizontally on the stack structure, an upper isolation structure extending in the first direction on the stack structure, and vertical structures that penetrate the stack structure and the selection structures.

• The semiconductor device includes a stack structure with vertically stacked gate electrodes on a substrate.
• Selection structures are horizontally spaced apart on the stack structure.
• An upper isolation structure is present between the selection structure and extends in the first direction on the stack structure.
• Vertical structures penetrate the stack structure and the selection structures.
• The vertical structures include first vertical structures arranged along the first direction and penetrating portions of the upper isolation structure.
• Each selection structure consists of a selection gate electrode and a horizontal dielectric pattern that surrounds the top, bottom, and sidewall surfaces of the selection gate electrode.
• Each selection gate electrode has a line part extending in the first direction and an electrode part that vertically protrudes from the line part and surrounds at least a portion of each first vertical structure.

Potential applications of this technology:

• Semiconductor devices and electronic systems
• Integrated circuits
• Memory devices

Problems solved by this technology:

• Improved performance and efficiency of semiconductor devices
• Enhanced integration of components in electronic systems
• Reduction of power consumption

Benefits of this technology:

• Higher performance and efficiency in semiconductor devices
• Increased integration capabilities in electronic systems
• Lower power consumption and improved energy efficiency

Original Abstract Submitted

Disclosed are semiconductor devices and electronic systems including the same. The semiconductor device may include a stack structure extending in a first direction and including gate electrodes vertically stacked on a substrate, selection structures horizontally spaced apart on the stack structure, an upper isolation structure between the selection structure and extending in the first direction on the stack structure, and vertical structures penetrating the stack structure and the selection structures. The vertical structures include first vertical structures arranged along the first direction and penetrating portions of the upper isolation structure. Each selection structure includes a selection gate electrode and a horizontal dielectric pattern that surrounds top, bottom, and sidewall surfaces of the selection gate electrode. Each selection gate electrode includes a line part extending in the first direction, and an electrode part vertically protruding from the line part and surrounding at least a portion of each first vertical structure.