17857441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
YOUNGSIN Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17857441 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with different regions, such as an active cell region, a boundary region, and a dummy cell region.
- The device has bit lines that are arranged in a specific direction and are spaced apart from each other.
- Bitline pads are located on the boundary region and are connected to the second bit lines.
- An insulating separation pattern is present on the boundary region and between the bitline pads.
- A portion of the insulating separation pattern extends between the second bit lines and is in contact with the end portion of a corresponding first bit line.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Memory devices
- Integrated circuits
Problems solved by this technology:
- Efficient use of space on the semiconductor device
- Improved connectivity between bit lines and bitline pads
- Reduction of electrical interference between adjacent bit lines
Benefits of this technology:
- Increased performance and reliability of the semiconductor device
- Enhanced manufacturing efficiency
- Cost savings in the production process.
Original Abstract Submitted
A semiconductor device includes a substrate including an active cell region, a boundary region, and a dummy cell region therebetween, bit lines disposed on the active cell region, extended in a first direction, and spaced apart from each other in a second direction, the bit lines including first and second bit lines alternately arranged in the second direction, bitline pads spaced apart from each other in the second direction on the boundary region, the second bit lines being extended to the dummy cell region and the boundary region in the first direction and being connected to the bitline pads, respectively, and an insulating separation pattern on the boundary region and between the bitline pads. A portion of the insulating separation pattern is extended into a region between the second bit lines on the boundary region and is in contact with an end portion of a corresponding first bit line.
