17857082. SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jung Chak Ahn of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17857082 titled 'SEMICONDUCTOR DEVICE AND IMAGE SENSOR INCLUDING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The disclosed semiconductor device consists of a substrate and a gate structure on the substrate. The gate structure has three sides, with the first and second sides extending in one direction and spaced apart from each other in another direction, and the third side extending parallel to the second direction. The device also includes multiple source/drain areas, with the first and second source/drain areas spaced apart from each other in the second direction, and the third source/drain area spaced apart from either the first or second source/drain area in the first direction. The first and second source/drain areas overlap the first and second sides of the gate structure, respectively, while the third source/drain area overlaps either the first or third side. The first and second source/drain areas have a different voltage applied to them compared to the voltage applied to the third source/drain area.
- The semiconductor device has a gate structure with three sides and multiple source/drain areas.
- The source/drain areas are arranged in a specific configuration, overlapping different sides of the gate structure.
- Different voltages are applied to the source/drain areas based on their respective values.
Potential Applications
- This semiconductor device can be used in various electronic devices that require efficient control of current flow.
- It can be applied in integrated circuits, microprocessors, and other semiconductor-based technologies.
Problems Solved
- The disclosed device provides a more flexible and efficient way to control current flow in a semiconductor device.
- It solves the problem of limited control options for current flow in traditional semiconductor devices.
Benefits
- The configuration of the gate structure and source/drain areas allows for better control and optimization of current flow.
- The ability to apply different voltages to the source/drain areas provides more flexibility in device operation.
- This technology can lead to improved performance and energy efficiency in electronic devices.
Original Abstract Submitted
Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.
