17854638. METHOD OF ERROR CORRECTION CODE (ECC) DECODING AND MEMORY SYSTEM PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
METHOD OF ERROR CORRECTION CODE (ECC) DECODING AND MEMORY SYSTEM PERFORMING THE SAME
Organization Name
Inventor(s)
GEUNYEONG Yu of SEONGNAM-SI (KR)
SEONGHYEOG Choi of HWASEONG-SI (KR)
YOUNGJUN Hwang of OSAN-SI (KR)
METHOD OF ERROR CORRECTION CODE (ECC) DECODING AND MEMORY SYSTEM PERFORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17854638 titled 'METHOD OF ERROR CORRECTION CODE (ECC) DECODING AND MEMORY SYSTEM PERFORMING THE SAME
Simplified Explanation
The patent application describes a method for error correction code (ECC) decoding in nonvolatile memory devices. Here is a simplified explanation of the abstract:
- The method starts by reading normal data from the memory device using normal read voltages.
- A first ECC decoding is performed on the normal data to check for errors.
- If the first ECC decoding fails, flip read data is read from the memory device using flip read voltages that correspond to a specific range of threshold voltage.
- Corrected read data is generated by inverting error candidate bits within the flip range among the normal data bits.
- A second ECC decoding is performed on the corrected read data.
- If the second ECC decoding also fails, the method can retry ECC decoding based on the corrected read data.
Potential applications of this technology:
- Nonvolatile memory devices, such as flash memory or solid-state drives, can benefit from enhanced error correction capabilities.
- This method can be used in data storage systems where data integrity is crucial, such as in enterprise storage solutions or critical infrastructure systems.
Problems solved by this technology:
- Nonvolatile memory devices are prone to errors due to various factors like noise, wear, or voltage fluctuations.
- Traditional ECC decoding may not be sufficient to correct all errors, especially when the errors occur within a specific threshold voltage range.
- This method addresses the problem by introducing flip read data and correcting errors within the flip range, improving the overall error correction capability.
Benefits of this technology:
- Enhanced error correction capability improves data integrity and reliability in nonvolatile memory devices.
- By retrying ECC decoding based on corrected read data, the method increases the chances of successfully correcting errors that were initially missed.
- The method can be implemented without significant changes to existing nonvolatile memory devices, making it a cost-effective solution for improving error correction.
Original Abstract Submitted
In a method of error correction code (ECC) decoding, normal read data are read from a nonvolatile memory device based on normal read voltages, and a first ECC decoding is performed with respect to the normal read data. When the first ECC decoding results in failure, flip read data are read from the nonvolatile memory device based on flip read voltages corresponding to a flip range of a threshold voltage. Corrected read data are generated based on the flip read data by inverting error candidate bits included in the flip range among bits of the normal read data, and a second ECC decoding is performed with respect to the corrected read voltage. Error correction capability may be enhanced by retrying ECC decoding based on the corrected read data when ECC decoding based on the normal read data results in failure.
