17852812. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Seungmin Lee of Seoul (KR)

Junhyoung Kim of Seoul (KR)

Kangmin Kim of Hwaseong-si (KR)

Joonsung Lim of Seongnam-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17852812 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a semiconductor substrate, a peripheral circuit structure, a plate pattern, and a stack structure. The stack structure consists of a first stack region and a second stack region. The first stack region includes gate electrodes stacked vertically, while the second stack region includes both a conductor stack region and an insulator stack region at the same height level. The device also includes a vertical memory structure and source contact plugs.

• The semiconductor device includes a peripheral circuit structure and a stack structure.
• The stack structure consists of a first stack region and a second stack region.
• The first stack region includes vertically stacked gate electrodes.
• The second stack region includes a conductor stack region and an insulator stack region at the same height level.
• The device also includes a vertical memory structure and source contact plugs.

Potential Applications

• This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
• It can be applied in memory modules, processors, and other integrated circuits.

Problems Solved

• The device solves the problem of efficiently integrating gate electrodes and conductor layers in a semiconductor device.
• It addresses the need for a compact and high-performance semiconductor device.

Benefits

• The device allows for a more compact design due to the vertical stacking of gate electrodes and conductor layers.
• It provides improved performance and efficiency in semiconductor devices.
• The vertical memory structure enhances the memory capabilities of the device.

Original Abstract Submitted

A semiconductor device may include: a semiconductor substrate; a peripheral circuit structure on the semiconductor substrate; a plate pattern on the peripheral circuit structure and having a gap; and a stack structure on the plate pattern and including a first stack region and a second stack region. The first stack region may include gate electrodes stacked in a vertical direction perpendicular to an upper surface of the semiconductor substrate, and the second stack region may include both a conductor stack region including conductive layers stacked in the vertical direction and an insulator stack region including molded insulating layers at substantially the same height level as the conductive layers. The semiconductor device may also include vertical memory structure that extends through the first stack region; and source contact plugs electrically connected to at least one of the conductive layers of the conductor stack region and contacting the plate pattern.