17852035. DATA TRANSFER CIRCUITS IN NONVOLATILE MEMORY DEVICES AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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DATA TRANSFER CIRCUITS IN NONVOLATILE MEMORY DEVICES AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

EUNJIN Song of SUWON-SI (KR)

KYOUNGTAE Kang of SEOUL (KR)

SANGLOK Kim of SEOUL (KR)

CHIWEON Yoon of SEOUL (KR)

BYUNGHOON Jeong of HWASEONG-SI (KR)

DATA TRANSFER CIRCUITS IN NONVOLATILE MEMORY DEVICES AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17852035 titled 'DATA TRANSFER CIRCUITS IN NONVOLATILE MEMORY DEVICES AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME

Simplified Explanation

The abstract describes a data transfer circuit in a nonvolatile memory device. Here are the key points:

  • The circuit includes first repeaters, second repeaters, and signal lines.
  • The signal lines connect the first repeaters and the second repeaters.
  • The signal lines are divided into a first group and a second group, which are arranged alternately.
  • The first repeaters are divided into a first group activated in a first operation mode and a second group activated in a second operation mode.
  • The second repeaters are divided into a third group activated in the first operation mode and a fourth group activated in the second operation mode.
  • The third group of repeaters is connected to the first group of repeaters through the first group of signal lines when in the second operation mode.
  • The fourth group of repeaters is connected to the second group of repeaters through the second group of signal lines when in the first operation mode.

Potential applications of this technology:

  • Nonvolatile memory devices, such as flash memory or solid-state drives.
  • Data storage and retrieval systems.
  • Computer systems and electronic devices that require efficient data transfer.

Problems solved by this technology:

  • Efficient data transfer between different groups of repeaters in a nonvolatile memory device.
  • Minimizing signal interference and improving signal integrity during data transfer.

Benefits of this technology:

  • Improved performance and reliability of nonvolatile memory devices.
  • Enhanced data transfer speed and efficiency.
  • Reduced signal interference and improved signal quality.
  • Increased overall system performance and responsiveness.


Original Abstract Submitted

A data transfer circuit in a nonvolatile memory device includes first repeaters, second repeaters and signal lines. The signal lines connect the first repeaters and the second repeaters, and include a first group of signal lines and a second group of signal lines alternatingly arranged. The first repeaters include a first group of repeaters activated in a first operation mode and a second group of repeaters activated in a second operation mode. The second repeaters include a third group of repeaters activated in the first operation mode and are connected to the first group of repeaters through the first group of signal lines floated in the second operation mode, and a fourth group of repeaters activated in the second operation mode and are connected to the second group of repeaters through the second group of signal lines floated in the first operation mode.