17851036. VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17851036 titled 'VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
Simplified Explanation
The abstract describes a phase change device that includes a substrate with a top surface and a heater structure on the substrate. A phase change element is placed over the heater structure, consisting of three connected portions.
- The device is a phase change device with a substrate and a heater structure.
- The heater structure has first and second sidewalls on opposite sides.
- A phase change element is placed over the heater structure.
- The phase change element consists of three connected portions.
- The first portion is over the heater structure.
- The second portion is over the first sidewall of the heater structure.
- The third portion is over a portion of the top surface of the substrate adjacent to and spaced apart from the first sidewall of the heater structure.
Potential Applications
- Thermal management systems
- Heat transfer devices
- Cooling systems
Problems Solved
- Efficient heat transfer
- Improved thermal management
- Enhanced cooling capabilities
Benefits
- Increased heat dissipation
- Better temperature control
- Enhanced device performance
Original Abstract Submitted
A phase change device includes a substrate with a top surface. A heater structure is disposed on the substrate. The heater structure has first and second sidewalls on opposite sides of the heater structure. A phase change element is disposed over the heater structure. The phase change element includes three connected portions. A first portion is disposed over the heater structure. A second portion is disposed over the first sidewall of the heater structure. A third portion is over a first portion of the top surface of the substrate adjacent to and spaced apart from the first sidewall of the heater structure.
