17850477. DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kai-Yun Yang of Tainan (TW)

Yu-Jen Wang of Kaohsiung (TW)

DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17850477 titled 'DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF

Simplified Explanation

The abstract describes a patent application for a Deep Trench Isolation (DTI) structure in a semiconductor substrate. The DTI structure includes an isolation layer made of a p-type semiconductor material, with sidewall portions in contact with the substrate and a bottom portion in contact with a connection feature. The connection feature is connected to an interconnect structure and can apply a bias to the isolation layer to achieve controllable passivation in the substrate.

• The patent application describes a DTI structure formed in a semiconductor substrate.
• The DTI structure includes an isolation layer made of a p-type semiconductor material.
• Sidewall portions of the isolation layer are in contact with the semiconductor substrate.
• A bottom portion of the isolation layer is in contact with a connection feature.
• The connection feature is connected to an interconnect structure.
• The connection feature can apply a bias to the isolation layer to achieve controllable passivation in the semiconductor substrate.

Potential Applications

• Semiconductor manufacturing
• Integrated circuits
• Electronic devices

Problems Solved

• Provides a method for achieving controllable passivation in a semiconductor substrate.
• Improves isolation between components in a semiconductor device.
• Enhances the performance and reliability of integrated circuits.

Benefits

• Enables better control over the passivation process in semiconductor substrates.
• Improves the isolation capabilities of the DTI structure.
• Enhances the overall performance and reliability of semiconductor devices.

Original Abstract Submitted

A Deep Trench Isolation (DTI) structure is disclosed. A DTI structure formed in a semiconductor substrate. The DIT structure includes an isolation layer and filling material. The isolation layer is formed from a p-type semiconductor material. Sidewall portions of the isolation layer are in contact with the semiconductor substrate. A bottom portion of the isolation layer is in contact with a connection feature, which is connected to an interconnect structure and configured to apply a bias to the isolation layer of the DTI structure to achieve a controllable passivation in the semiconductor substrate.