17849930. MIM CAPACITOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MIM CAPACITOR AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsing-Lien Lin of Hsinchu (TW)
Hai-Dang Trinh of Hsinchu (TW)
MIM CAPACITOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17849930 titled 'MIM CAPACITOR AND METHOD OF FORMING THE SAME
Simplified Explanation
The abstract describes a metal-insulator-metal (MIM) capacitor and the methods used to create it. Here are the key points:
- The method involves creating an opening in one or more dielectric layers.
- A layer is deposited in the opening and on the dielectric layers.
- An anisotropic etch process is used to remove parts of the layer on horizontal surfaces.
- The opening is extended to a deeper depth in the dielectric layers.
- The layer is removed.
- The opening is further extended to an even deeper depth in the dielectric layers.
- Finally, a MIM capacitor is formed in the opening.
Potential applications of this technology:
- Integrated circuits and semiconductor devices
- Energy storage systems
- Capacitive sensors
- Radio frequency (RF) devices
Problems solved by this technology:
- Provides a method for creating a metal-insulator-metal (MIM) capacitor with precise dimensions and control over the depth of the opening.
- Enables the formation of a MIM capacitor with improved performance and reliability.
Benefits of this technology:
- Allows for the creation of MIM capacitors with high capacitance density.
- Provides better control over the dimensions and depth of the capacitor, leading to improved performance.
- Enhances the reliability and stability of the MIM capacitor.
- Enables the integration of MIM capacitors into various electronic devices and systems.
Original Abstract Submitted
A metal-insulator-metal (MIM) capacitor and methods of forming the same are described. In some embodiments, the method includes forming an opening having a first depth in one or more dielectric layers, depositing a layer in the opening and on the one or more dielectric layers, performing an anisotropic etch process to remove portions of the layer formed on horizontal surfaces, extending the opening to a second depth in the one or more dielectric layers, removing the layer, extending the opening to a third depth in the one or more dielectric layers, and forming a MIM capacitor in the opening.
