17848806. INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kuo-Yu Hsiang of Kaohsiung City (TW)

Chun-Yu Liao of Taipei City (TW)

Jen-Ho Liu of Taipei City (TW)

Min-Hung Lee of Taipei City (TW)

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17848806 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

Abstract: An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode. The dielectric layer is over the bottom electrode. The antiferroelectric layer is over the dielectric layer. The top electrode is over the antiferroelectric layer.

Patent/Innovation Explanation:

  • The patent describes an integrated circuit device that includes a memory device.
  • The memory device is positioned over a substrate.
  • The memory device consists of several layers: a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode.
  • The dielectric layer is located above the bottom electrode.
  • The antiferroelectric layer is positioned above the dielectric layer.
  • The top electrode is placed over the antiferroelectric layer.

Potential Applications:

  • This technology can be used in various electronic devices that require memory storage, such as computers, smartphones, and tablets.
  • It can also be applied in embedded systems, automotive electronics, and IoT devices.

Problems Solved:

  • The patent addresses the need for an integrated circuit device with an efficient and reliable memory device.
  • It solves the problem of storing and retrieving data in electronic devices by providing a memory device with improved performance and stability.

Benefits of this Technology:

  • The integrated circuit device offers enhanced memory capabilities, allowing for efficient data storage and retrieval.
  • The technology provides improved stability and reliability in memory operations.
  • It offers a compact and cost-effective solution for memory storage in electronic devices.


Original Abstract Submitted

An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode. The dielectric layer is over the bottom electrode. The antiferroelectric layer is over the dielectric layer. The top electrode is over the antiferroelectric layer.

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