17848605. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chung-Liang Cheng of Changhua County (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17848605 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The abstract describes a patent application for a FinFET transistor with an embedded resistor. The resistor is located in the fin between the source epitaxial region and the source contact. A control contact can be used to change the resistivity of the resistor. The edge gates of the FinFET transistor are replaced with insulating structures. Multiple FinFET/embedded resistor combinations can be used together in a common drain/common source contact design.
- FinFET transistor with embedded resistor in the fin between source epitaxial region and source contact
- Control contact used to change the resistivity of the embedded resistor
- Edge gates of the FinFET transistor replaced with insulating structures
- Multiple FinFET/embedded resistor combinations can be used in a common drain/common source contact design
Potential Applications
- Integrated circuits
- Semiconductor devices
- Transistor technology
Problems Solved
- Improved performance and functionality of FinFET transistors
- Enhanced control over resistivity in the transistor design
- Simplified transistor structure with insulating structures replacing edge gates
Benefits
- Increased efficiency and reliability of integrated circuits
- Improved control over resistivity for better circuit design
- Simplified transistor structure for easier manufacturing and integration
Original Abstract Submitted
Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby changing the resistivity of the resistor. Edge gates of the FinFET transistor may be replaced with insulating structures. Multiple ones of the FinFET/embedded resistor combination may be utilized together in a common drain/common source contact design.
