17848053. ASYMMETRICAL DIELECTRIC-TO-METAL ADHESION ARCHITECTURE FOR ELECTRONIC PACKAGES simplified abstract (Intel Corporation)
ASYMMETRICAL DIELECTRIC-TO-METAL ADHESION ARCHITECTURE FOR ELECTRONIC PACKAGES
Organization Name
Inventor(s)
Suddhasattwa Nad of Chandler AZ (US)
Jason Steill of Phoenix AZ (US)
Jieying Kong of Chandler AZ (US)
ASYMMETRICAL DIELECTRIC-TO-METAL ADHESION ARCHITECTURE FOR ELECTRONIC PACKAGES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17848053 titled 'ASYMMETRICAL DIELECTRIC-TO-METAL ADHESION ARCHITECTURE FOR ELECTRONIC PACKAGES
Simplified Explanation
The abstract describes an electronic device package that includes a substrate with conductive features and dielectric materials on both sides. The first dielectric material has a composition of silicon and nitrogen, while the second dielectric material has a different composition. The second surface of the second conductive feature has a greater surface roughness compared to the first surface.
- The electronic device package includes a substrate with conductive features and dielectric materials.
- The first dielectric material is made of silicon and nitrogen, while the second dielectric material has a different composition.
- The second surface of the second conductive feature has a greater surface roughness than the first surface.
Potential applications of this technology:
- Electronic devices and circuits
- Semiconductor packaging
- Integrated circuits
Problems solved by this technology:
- Improved electrical performance and reliability of electronic devices
- Enhanced thermal management
- Reduced signal interference and crosstalk
Benefits of this technology:
- Increased efficiency and functionality of electronic devices
- Improved signal integrity and data transmission
- Enhanced durability and longevity of electronic components
Original Abstract Submitted
An electronic device package comprises a substrate with a first side and a second side opposite the first side; a first conductive feature on the first side and having a first surface; a first dielectric material in contact with the first surface, wherein the first dielectric material has a first composition comprising silicon and nitrogen; a second conductive feature on the second side of the substrate and having a second surface; and a second dielectric material in contact with the second surface, wherein the second dielectric material has a second composition different than the first composition, and wherein a surface roughness of the second surface is greater than a surface roughness of the first surface.
