17847863. METHOD FOR FORMING A CONTACT PLUG WITH IMPROVED CONTACT METAL SEALING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METHOD FOR FORMING A CONTACT PLUG WITH IMPROVED CONTACT METAL SEALING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chung-Liang Cheng of Hsinchu (TW)
Huang-Lin Chao of Hsinchu (TW)
METHOD FOR FORMING A CONTACT PLUG WITH IMPROVED CONTACT METAL SEALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17847863 titled 'METHOD FOR FORMING A CONTACT PLUG WITH IMPROVED CONTACT METAL SEALING
Simplified Explanation
The patent application describes a method for forming a metal contact plug on a substrate. The method involves several steps, including etching the substrate to create a contact hole, forming a dielectric liner layer on the sidewall of the contact hole, and then forming the metal contact plug within the hole. Additionally, an implantation process is performed on the substrate to introduce dopants with a larger atomic size than silicon.
- The method involves etching a substrate to create a contact hole.
- A dielectric liner layer is formed on the sidewall of the contact hole.
- A metal contact plug is formed within the contact hole.
- An implantation process is performed to introduce dopants with a larger atomic size than silicon into the substrate.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Microelectronics industry
Problems solved by this technology:
- Provides a method for forming metal contact plugs on substrates
- Improves the reliability and performance of integrated circuits
- Enables the integration of different materials with silicon substrates
Benefits of this technology:
- Simplifies the process of forming metal contact plugs
- Enhances the electrical properties of the contact plugs
- Enables the use of different materials in semiconductor devices
Original Abstract Submitted
A method is provided for forming a metal contact plug. In one step, a substrate, which is an Si substrate or an SiOsubstrate, is etched to form a contact hole. In one step, a dielectric liner layer is formed on a sidewall of the contact hole. In one step, the metal contact plug that is in contact with the dielectric liner layer is formed in the contact hole. In one step, an implantation process is performed on the substrate, so as to implant dopants having an atomic size greater than that of Si into the substrate.
