17847450. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Kuan Yu of Zhushan Township (TW)
Shen-Hui Hong of Tainan City (TW)
Feng-Chi Hung of Chu-Bei City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
Dun-Nian Yaung of Taipei City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17847450 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The present disclosure describes a semiconductor device with a multi-gate structure. The device includes a substrate, a doped region, a gate electrode, a source region, a drain region, and a shallow trench isolation (STI) structure.
- The device has a substrate and a doped region within the substrate.
- A gate electrode is placed over the doped region.
- The doped region also contains a source region and a drain region.
- The source and drain regions are surrounded by a shallow trench isolation (STI) structure.
- A first doped liner separates the STI structure from the source and drain regions.
- A second doped liner is placed along the STI structure, separated from the first doped liner by the STI structure.
Potential applications of this technology:
- This multi-gate structure can be used in various semiconductor devices, such as transistors, to improve their performance and efficiency.
- It can be applied in integrated circuits, microprocessors, and other electronic devices that require high-speed and low-power operation.
Problems solved by this technology:
- The multi-gate structure helps to reduce leakage current and improve control over the flow of electrons in the semiconductor device.
- It minimizes the impact of parasitic capacitance and resistance, leading to enhanced performance and reduced power consumption.
Benefits of this technology:
- The multi-gate structure provides better control over the flow of electrons, resulting in improved device performance and efficiency.
- It helps to reduce power consumption and increase battery life in electronic devices.
- The technology enables the development of smaller and more compact semiconductor devices without compromising their functionality.
Original Abstract Submitted
The present disclosure relates to semiconductor device with a multi-gate structure. The semiconductor device includes a substrate and a doped region disposed within the substrate. A gate electrode is disposed over the doped region, and a source region and a drain region are disposed within the doped region. A shallow trench isolation (STI) structure is disposed within the substrate and laterally surrounds the source region and the drain region. A first doped liner is disposed along the STI structure, where the first doped liner separates the STI structure from the source region and the drain region. A second doped liner is disposed along the STI structure, where the second doped liner is separated from the first doped liner by the STI structure above a bottom surface of the STI structure.
