17847090. SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Young Ho Hwang of Hwaseong-si (KR)
Eun Seok Seo of Gwangmyeong-si (KR)
Jae Hong Lim of Pyeongtaek-si (KR)
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17847090 titled 'SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The abstract describes a substrate processing apparatus used in manufacturing semiconductor devices. The apparatus includes a heater in a support plate that is divided into two units. The first unit heats a first portion of the substrate, while the second unit heats a second portion of the substrate. The processing circuitry controls the heater in a transient section, where the first unit heats the first portion to a first temperature and the second unit heats the second portion to a different second temperature. Once the substrate reaches a steady state temperature, the steady section begins.
- The substrate processing apparatus includes a support plate with a heater divided into two units.
- The first unit heats a first portion of the substrate, while the second unit heats a second portion.
- The processing circuitry controls the heater during the transient section before the substrate reaches a steady state temperature.
- The first and second portions of the substrate are heated to different temperatures.
- The steady section begins after the substrate reaches a steady state temperature.
Potential applications of this technology:
- Semiconductor manufacturing processes that require different temperatures in different portions of the substrate.
- Increasing efficiency and precision in substrate processing for semiconductor devices.
Problems solved by this technology:
- Ensuring that different portions of the substrate are heated to the desired temperatures during processing.
- Controlling the heating process during the transient section to avoid temperature fluctuations.
Benefits of this technology:
- Improved control and accuracy in substrate processing.
- Enhanced efficiency and productivity in semiconductor manufacturing.
- Enables the production of high-quality semiconductor devices.
Original Abstract Submitted
Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.
