17844623. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17844623 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes an integrated circuit semiconductor device that includes a lower electrode formed on a substrate and a support structure supporting the lower electrode. The support structure has a support pattern surrounding the lower electrode and a concavo-convex structure with convex and concave portions.
- The integrated circuit semiconductor device has a lower electrode formed on a substrate.
- The support structure supports the lower electrode and includes a support pattern and a concavo-convex structure.
- The support pattern surrounds the lower electrode and extends in two directions.
- The support pattern has a hole through which the lower electrode passes.
- The concavo-convex structure is located on the surface of the support pattern.
- The concavo-convex structure has multiple convex portions and concave portions.
- The convex portions extend in a direction perpendicular to the two directions of the support pattern.
Potential applications of this technology:
- Integrated circuit manufacturing
- Semiconductor device fabrication
- Electronics industry
Problems solved by this technology:
- Provides support for the lower electrode in an integrated circuit semiconductor device.
- Helps prevent damage or deformation of the lower electrode.
- Enhances the stability and reliability of the integrated circuit.
Benefits of this technology:
- Improved structural support for the lower electrode.
- Increased stability and reliability of the integrated circuit.
- Reduced risk of damage or deformation to the lower electrode.
Original Abstract Submitted
An integrated circuit semiconductor device includes a lower electrode formed on a substrate extending in a first direction and a second direction perpendicular to the first direction and a support structure supporting the lower electrode. The support structure includes a support pattern surrounding the lower electrode, extending in the first direction and the second direction, and having a hole through which the lower electrode passes, and a concavo-convex structure having at a surface of the support pattern a plurality of convex portions extending in a third direction perpendicular to the first direction and the second direction, and a plurality of concave portions arranged between the convex portions.
