17840097. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FUSE STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FUSE STRUCTURE
Organization Name
Inventor(s)
HSIH-YANG Chiu of TAOYUAN CITY (TW)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FUSE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17840097 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FUSE STRUCTURE
Simplified Explanation
The abstract describes a method for fabricating a semiconductor device. Here is a simplified explanation of the abstract:
- The method involves three main steps: providing a substrate, forming a fuse element within the substrate, and forming a fuse medium in contact with the fuse element.
- The fuse element is located within the substrate and extends from its upper surface.
- The fuse medium is placed in contact with the fuse element but is spaced apart from the upper surface of the substrate.
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Integrated circuits (ICs)
- Microprocessors
- Memory devices
- Power devices
Problems Solved
The method for fabricating a semiconductor device described in the patent application solves several problems, such as:
- Efficiently integrating fuse elements within a substrate.
- Ensuring proper contact between the fuse element and the fuse medium.
- Providing a reliable and accurate fuse mechanism for circuit protection or programming purposes.
Benefits
The use of this method for fabricating a semiconductor device offers several benefits, including:
- Improved reliability and accuracy of fuse mechanisms.
- Enhanced circuit protection and programming capabilities.
- Efficient integration of fuse elements within the substrate.
- Potential cost savings in the manufacturing process.
Original Abstract Submitted
A method for fabricating a semiconductor device is provided. The method includes providing a substrate; forming a fuse element within the substrate and extending from an upper surface of the substrate; and forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate.
