17840081. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD simplified abstract (NANYA TECHNOLOGY CORPORATION)

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METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

Yi-Jen Lo of NEW TAIPEI CITY (TW)

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17840081 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE HAVING HYBRID BONDING PAD

Simplified Explanation

The present disclosure describes a method of manufacturing a semiconductor structure. This method involves several steps, including providing a first semiconductor substrate, forming a first conductive pad over the substrate, and forming a first hybrid bonding pad on top of the conductive pad. The first hybrid bonding pad is made of nano-twins copper and has a thickness that is less than the thickness of the first conductive pad.

  • The method involves providing a first semiconductor substrate.
  • A first conductive pad is formed over the first semiconductor substrate.
  • A first hybrid bonding pad is formed on top of the first conductive pad.
  • The first hybrid bonding pad is made of nano-twins copper.
  • The thickness of the first hybrid bonding pad is less than the thickness of the first conductive pad.

Potential applications of this technology:

  • Manufacturing of semiconductor structures
  • Improving the performance and reliability of semiconductor devices

Problems solved by this technology:

  • Enhancing the bonding between different layers of a semiconductor structure
  • Improving the electrical conductivity of the bonding pad

Benefits of this technology:

  • Increased performance and reliability of semiconductor devices
  • Enhanced electrical conductivity and bonding strength
  • Cost-effective manufacturing process


Original Abstract Submitted

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a first semiconductor substrate. The method also includes forming a first conductive pad over the first semiconductor substrate. The method further includes forming a first hybrid bonding pad on the first conductive pad, wherein the first hybrid bonding pad includes nano-twins copper, and a thickness of the first hybrid bonding pad is less than a thickness of the first conductive pad.

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