17839612. SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seryeun Yang of Hwaseong-si (KR)

SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17839612 titled 'SEMICONDUCTOR MEMORY DEVICES

Simplified Explanation

The abstract describes a semiconductor memory device that includes various components such as a substrate, source/drain regions, a bit line, a storage node contact, a spacer structure, a landing pad, an insulating pattern, and a liner. The insulating pattern has an upper and lower portion, with the lower portion being wider than the upper portion.

• The semiconductor memory device includes a substrate with an active pattern.
• The active pattern has first and second source/drain regions that are spaced apart.
• A bit line is connected to the first source/drain region and crosses the active pattern.
• A storage node contact is connected to the second source/drain region.
• A spacer structure is present between the bit line and the storage node contact.
• A landing pad is electrically connected to the storage node contact.
• An insulating pattern is located on the spacer structure and adjacent to the landing pad.
• The insulating pattern has an upper insulating portion and a lower insulating portion.
• The lower insulating portion has a larger width than the upper insulating portion.
• A liner is present between the insulating pattern and the landing pad.

Potential Applications

• This semiconductor memory device can be used in various electronic devices such as computers, smartphones, and tablets.
• It can be utilized in data storage systems, improving the performance and capacity of memory devices.

Problems Solved

• The semiconductor memory device solves the problem of signal interference between the bit line and the storage node contact.
• The insulating pattern and spacer structure help to prevent electrical leakage and improve the overall efficiency of the memory device.

Benefits

• The design of the insulating pattern with different widths helps to reduce signal interference and improve the reliability of the memory device.
• The presence of the spacer structure and liner enhances the insulation properties and prevents electrical leakage.
• The semiconductor memory device provides improved performance and capacity for data storage systems.

Original Abstract Submitted

A semiconductor memory device may include a substrate including an active pattern, the active pattern including first and second source/drain regions spaced apart from each other, a bit line that is electrically connected to the first source/drain region and crosses the active pattern, a storage node contact electrically connected to the second source/drain region, a spacer structure between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, an insulating pattern on the spacer structure and adjacent to the landing pad, and a liner between the insulating pattern and the landing pad. The insulating pattern may include an upper insulating portion and a lower insulating portion between the upper insulating portion and the spacer structure. The largest width of the lower insulating portion may be larger than the smallest width of the upper insulating portion.