17839447. SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Szu-Hua Chen of Tainan City (TW)
Wei-Yen Woon of Taoyuan City (TW)
SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17839447 titled 'SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate and an interconnection layer. The interconnection layer consists of multiple etch-stop layers, first dielectric layers, and conductive layers. The first dielectric layers are made of porous organic framework (POF) materials with a low dielectric constant and high thermal conductivity. The conductive layers are embedded within the first dielectric layers.
- The interconnection layer of the semiconductor device includes multiple etch-stop layers, first dielectric layers, and conductive layers.
- The first dielectric layers are made of porous organic framework (POF) materials.
- The POF dielectrics have a low dielectric constant of 2 or less.
- The POF dielectrics have a high thermal conductivity of 1 W/(m·K) or more.
- The conductive layers are embedded within the first dielectric layers.
Potential Applications
- This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
- It can be used in the development of high-performance electronic devices that require efficient heat dissipation and low power consumption.
Problems Solved
- Traditional semiconductor devices often face challenges related to heat dissipation and power consumption.
- The use of POF dielectrics with high thermal conductivity helps to address these issues by improving heat transfer and reducing power consumption.
Benefits
- The use of POF dielectrics with a low dielectric constant allows for better signal integrity and reduced signal loss in the interconnection layer.
- The high thermal conductivity of the POF dielectrics helps in efficient heat dissipation, preventing overheating and improving the overall performance and reliability of the semiconductor device.
- The embedded conductive layers within the POF dielectrics provide enhanced electrical conductivity and connectivity within the interconnection layer.
Original Abstract Submitted
A semiconductor device includes a substrate and an interconnection layer disposed on the substrate. The interconnection layer includes a plurality of etch-stop layers, a plurality of first dielectric layers, and a plurality of conductive layers. The first dielectric layers are disposed on the plurality of etch-stop layers, wherein the plurality of first dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m·K) or more. The conductive layers are embedded in the first dielectric layers.
