17839127. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Li-Zhen Yu of New Taipei City (TW)

Lin-Yu Huang of Hsinchu (TW)

Huan-Chieh Su of Tianzhong Township (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17839127 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The patent application describes a method for forming a semiconductor device structure with a gate structure, source/drain structures, and a trench. The method involves depositing liner layers and a dummy material layer, etching the dummy material layer, and forming a power via structure. The dummy material layer is then removed to create an opening, and a sealing layer is formed over the opening with an air spacer underneath.

  • The method involves forming a gate structure, source/drain structures, and a trench.
  • Liner layers and a dummy material layer are deposited in the trench.
  • The dummy material layer is etched, and a second liner layer is deposited.
  • A power via structure is formed in the trench.
  • The dummy material layer is removed to create an opening.
  • A sealing layer is formed over the opening with an air spacer underneath.

Potential Applications

  • This method can be used in the manufacturing of semiconductor devices.
  • It can be applied in the production of various electronic components.

Problems Solved

  • The method provides a way to form a semiconductor device structure with improved sealing and air spacer features.
  • It solves the problem of creating a reliable and efficient power via structure.

Benefits

  • The method allows for the formation of a sealing layer with an air spacer, which can enhance the performance and reliability of the semiconductor device.
  • It provides a more efficient and effective way to create a power via structure.
  • The method can improve the overall functionality and durability of semiconductor devices.


Original Abstract Submitted

A method for forming a semiconductor device structure includes forming a gate structure surrounding the nanostructures. The method also includes forming source/drain structures over opposite sides of the gate structure. The method also includes forming a trench beside the source/drain structures. The method also includes depositing a first liner layer in the trench. The method also includes depositing a dummy material layer over the first liner layer. The method also includes etching the dummy material layer. The method also includes depositing a second liner layer over the dummy material layer. The method also includes forming a power via structure in the trench. The method also includes removing the dummy material layer to form an opening between the first liner layer and the second liner layer. The method also includes forming a sealing layer over the opening. An air spacer is formed under the sealing layer.

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