17838491. Semiconductor Wafer Dicing Method simplified abstract (Western Digital Technologies, Inc.)
Contents
Semiconductor Wafer Dicing Method
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
Chee Keong Chin of Shanghai (CN)
Zhonghua Qian of Shanghai (CN)
Semiconductor Wafer Dicing Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 17838491 titled 'Semiconductor Wafer Dicing Method
Simplified Explanation
The patent application describes a method for separating a semiconductor die from a semiconductor wafer without using a DAF laser. The process involves performing a partial cut on the wafer, applying tape lamination to the front side of the wafer, grinding the back side of the wafer, mounting it to a die attach film (DAF) layer, removing the tape lamination, and performing a DAF-die separation operation to separate the die from the adjacent die.
- Method for separating a semiconductor die from a semiconductor wafer without using a DAF laser
- Partial cut is made between the die and an adjacent die on the wafer
- Tape lamination is applied to the front side of the wafer where integrated circuits are exposed
- Back side of the wafer, which is the silicon layer of the die, is ground
- Wafer is mounted to a DAF layer
- Tape lamination is removed from the front side of the wafer
- DAF-die separation operation is performed to separate the die from the adjacent die
Potential Applications
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit production
Problems Solved
- Provides an alternative method for separating semiconductor dies from wafers without using a DAF laser
- Eliminates the need for DAF laser equipment and associated costs
- Reduces the risk of damage to the semiconductor dies during the separation process
Benefits
- Cost-effective method for die separation
- Improved yield and quality control in semiconductor manufacturing
- Simplified process compared to traditional methods
- Reduced risk of damage to the semiconductor dies
Original Abstract Submitted
A semiconductor die is separated from a semiconductor wafer using a method that involves performing a partial cut on the semiconductor wafer, applying tape lamination to a front side of the semiconductor wafer, grinding a back side of the semiconductor wafer, mounting the semiconductor wafer to a die attach film (DAF) layer, removing the tape lamination from the front side of the semiconductor wafer, and performing a DAF-die separation operation to separate the semiconductor die from the adjacent semiconductor die. A DAF laser is not used during the method of separating a semiconductor die from a semiconductor wafer. The front side is the side of the semiconductor wafer where integrated circuits are exposed. The partial cut is between the semiconductor die and an adjacent semiconductor die. The back side is opposite of the front side and the back side is a silicon layer of the semiconductor die.
