17838235. MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Cherng-Yu Wang of Hsinchu (TW)
Hsiao-Kuan Wei of Taoyuan (TW)
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17838235 titled 'MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a magnetic tunnel junction (MTJ) structure for data storage. The structure includes multiple layers and metal particles distributed in a discrete and non-continuous manner.
- The MTJ structure consists of a first ferromagnetic layer, a second ferromagnetic layer, and a first dielectric layer between them.
- Metal particles are present in contact with the second ferromagnetic layer, but they are distributed in a discrete and non-continuous manner.
- A second dielectric layer is placed over the metal particles.
Potential applications of this technology:
- Data storage devices: The MTJ structure can be used in magnetic storage devices such as hard disk drives and magnetic random-access memory (MRAM) to store data.
- Spintronics: The MTJ structure can be utilized in spintronic devices for various applications, including logic circuits and magnetic sensors.
Problems solved by this technology:
- Data storage density: The discrete and non-continuous distribution of metal particles allows for higher data storage density, as it enables more efficient use of space within the MTJ structure.
- Stability: The presence of the metal particles enhances the stability of the MTJ structure, reducing the likelihood of data loss or corruption.
Benefits of this technology:
- Increased data storage capacity: The improved density achieved through the discrete distribution of metal particles allows for higher data storage capacity in the same physical space.
- Enhanced data stability: The presence of metal particles improves the stability of the MTJ structure, ensuring reliable data storage and reducing the risk of data loss.
- Compatibility: The MTJ structure can be integrated into existing data storage technologies, making it compatible with current systems and devices.
Original Abstract Submitted
Embodiments of the present disclosure provide a magnetic tunnel junction (MTJ) structure for storing a data. In one embodiment, the MJT structure includes a first ferromagnetic layer, a second ferromagnetic layer disposed above the first ferromagnetic layer, a first dielectric layer disposed between and in contact with the first ferromagnetic layer and the second ferromagnetic layer, a plurality of metal particles disposed in contact with the second ferromagnetic layer, wherein the metal particles are distributed in a discrete and non-continuous manner, and a second dielectric layer disposed over the plurality of metal particles.
