17837910. SEMICONDUCTOR PROCESS CHAMBER WITH IMPROVED REFLECTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR PROCESS CHAMBER WITH IMPROVED REFLECTOR

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Sou-Chuan Chiang of Hsinchu (TW)

Chia-Hung Liu of Hsinchu (TW)

Yen Chuang of Taipei (TW)

SEMICONDUCTOR PROCESS CHAMBER WITH IMPROVED REFLECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837910 titled 'SEMICONDUCTOR PROCESS CHAMBER WITH IMPROVED REFLECTOR

Simplified Explanation

The patent application describes a substrate processing chamber used for epitaxial deposition processes. The chamber includes a substrate support, a reflector, heating elements, support kits, and a cooling plate.

  • The substrate support has an upper surface where the substrate is placed.
  • The reflector is positioned above the substrate support and has a body with an upper opening and a bottom opening. The body also has a flange with holes.
  • The heating elements are placed around the reflector and emit energy radiation.
  • The support kits consist of a bar member and a fastener that can be attached to the holes in the flange. They help secure the reflector at a height that allows better distribution of energy radiation across the substrate support.
  • The cooling plate is connected to the flange using the support kits and has an opening that allows the body of the reflector to pass through.

Potential applications of this technology:

  • Epitaxial deposition processes in semiconductor manufacturing.
  • Thin film deposition for electronic devices.
  • Solar cell manufacturing.

Problems solved by this technology:

  • Blockage of energy radiation caused by the reflector can be reduced, leading to more uniform heating of the substrate.
  • The reflector can be securely positioned at an optimal height, improving the efficiency of the deposition process.

Benefits of this technology:

  • Improved uniformity and efficiency in epitaxial deposition processes.
  • Enhanced control over the heating and cooling of the substrate.
  • Increased productivity and yield in semiconductor manufacturing.


Original Abstract Submitted

A substrate processing chamber for performing an epitaxial deposition process is provided. The chamber includes a substrate support having an upper surface, a reflector disposed above the substrate support. The reflector includes a body comprising an upper opening having a first diameter, a bottom opening having a second diameter less than the first diameter, and a flange protruding radially from an outer circumference of the body around the upper opening, wherein the flange comprises a plurality of holes. The chamber includes a plurality of heating elements disposed around the reflector, each heating element being operable to emit energy radiation, a plurality of support kits, each support kit comprising a bar member and a fastener removably coupled to the bar member, wherein the bar member and fastener are configured to secure to the respective hole in the flange so that the reflector is at a height that reduces blockage of the energy radiation and increases an amount of the energy radiation to be distributed across the upper surface of the substrate support. The chamber further includes a cooling plate coupled to the flange by the plurality of support kits, wherein the cooling plate comprises an opening sized to allow passage of the body of the reflector.

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