17837543. PATTERNING LAYER MODIFICATION USING DIRECTIONAL RADICAL RIBBON BEAM simplified abstract (Applied Materials, Inc.)
PATTERNING LAYER MODIFICATION USING DIRECTIONAL RADICAL RIBBON BEAM
Organization Name
Inventor(s)
John Hautala of Beverly MA (US)
PATTERNING LAYER MODIFICATION USING DIRECTIONAL RADICAL RIBBON BEAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17837543 titled 'PATTERNING LAYER MODIFICATION USING DIRECTIONAL RADICAL RIBBON BEAM
Simplified Explanation
The patent application describes methods for creating semiconductor patterning features. These features are formed by removing a portion of a resist layer or a carbon-based layer using a beam of neutral reactive radicals directed at a non-zero angle relative to the surface of the layer.
- The method involves providing a semiconductor device with a patterning layer that has multiple openings defined by its sidewalls.
- A beam of neutral reactive radicals is then directed into the sidewalls of the patterning layer.
- The beam is directed at a non-zero angle relative to the surface of the patterning layer.
- This beam of neutral reactive radicals removes a portion of the patterning layer, creating the desired semiconductor patterning features.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Nanotechnology research
Problems Solved
- Provides a method for creating semiconductor patterning features with high precision and accuracy.
- Allows for the formation of complex patterns and structures in semiconductor devices.
- Enables the fabrication of smaller and more efficient electronic components.
Benefits
- Improved control and accuracy in creating semiconductor patterning features.
- Enables the production of advanced semiconductor devices with higher performance.
- Reduces the size and complexity of electronic components, leading to smaller and more efficient devices.
Original Abstract Submitted
Disclosed are approaches for forming semiconductor patterning features. One method may include providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer. The method may further include removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.
