17836820. METHOD FOR FABRICATING MASK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
METHOD FOR FABRICATING MASK
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ping-Hsun Lin of New Taipei City (TW)
Hung-Yi Tsai of Hsinchu County (TW)
Hao-Ping Cheng of Taichung City (TW)
Ta-Cheng Lien of Hsinchu County (TW)
Hsin-Chang Lee of Hsinchu County (TW)
METHOD FOR FABRICATING MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 17836820 titled 'METHOD FOR FABRICATING MASK
Simplified Explanation
The abstract describes a method for fabricating a mask, which involves depositing a target layer on a dielectric substrate and forming a patterned photoresist layer based on an integrated circuit (IC) layout. The method also includes determining dry etch control parameters based on the material of the target layer and the IC layout, and using a dry etcher to etch the target layer through the patterned photoresist layer.
- The method involves depositing a target layer on a dielectric substrate.
- A patterned photoresist layer is formed based on an integrated circuit (IC) layout.
- Dry etch control parameters are determined based on the material of the target layer and the IC layout.
- A dry etcher is used to etch the target layer through the patterned photoresist layer.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Mask production for photolithography processes
Problems Solved
- Provides a method for fabricating masks with precise patterns for use in semiconductor manufacturing and integrated circuit fabrication.
- Enables efficient and accurate etching of target layers based on the specific material and layout requirements.
Benefits
- Allows for the production of high-quality masks with precise patterns.
- Enhances the efficiency and accuracy of the etching process.
- Enables the fabrication of complex integrated circuits with improved performance.
Original Abstract Submitted
A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.
