17836781. SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shuen-Shin Liang of Hsinchu (TW)

Chia-Hung Chu of Hsinchu (TW)

Po-Chin Chang of Hsinchu (TW)

Hsu-Kai Chang of Hsinchu (TW)

Kuan-Kan Hu of Hsinchu (TW)

Ken-Yu Chang of Hsinchu (TW)

Hung-Yi Huang of Hsinchu (TW)

Harry Chien of Hsinchu (TW)

Wei-Yip Loh of Hsinchu (TW)

Chun-I Tsai of Hsinchu (TW)

Hong-Mao Lee of Hsinchu (TW)

Sung-Li Wang of Hsinchu (TW)

Pinyen Lin of Hsinchu (TW)

Chuan-Hui Shen of Hsinchu (TW)

SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17836781 titled 'SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes various layers and structures for improved performance and connectivity. Here is a simplified explanation of the abstract:

• The semiconductor device consists of a substrate, which serves as the foundation.
• A source/drain region is embedded in the substrate, providing electrical connections.
• A silicide structure is placed on top of the source/drain region, enhancing conductivity.
• A first dielectric layer is added over the substrate, providing insulation.
• A conductive contact is inserted into the first dielectric layer, positioned above the silicide structure.
• A second dielectric layer is applied over the first dielectric layer, providing additional insulation.
• A via contact is placed in the second dielectric layer, connecting to the conductive contact.
• A first metal surrounds the via contact, further enhancing connectivity.

Potential applications of this technology:

• Integrated circuits: The semiconductor device can be used in the production of integrated circuits, enabling improved performance and connectivity.
• Microprocessors: The technology can be implemented in microprocessors, enhancing their functionality and efficiency.
• Memory devices: The semiconductor device can be utilized in memory devices, improving their speed and reliability.

Problems solved by this technology:

• Enhanced conductivity: The addition of the silicide structure improves the conductivity of the source/drain region, leading to better electrical connections.
• Improved insulation: The use of multiple dielectric layers provides better insulation between different components, reducing the risk of electrical interference.

Benefits of this technology:

• Increased performance: The improved conductivity and insulation result in enhanced performance of the semiconductor device.
• Better connectivity: The various layers and structures enable more efficient and reliable electrical connections.
• Higher efficiency: The technology allows for more efficient use of electrical energy, leading to improved overall efficiency of the device.

Original Abstract Submitted

A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.