17836657. PLASMA PRECLEAN SYSTEM FOR CLUSTER TOOL simplified abstract (Applied Materials, Inc.)

PLASMA PRECLEAN SYSTEM FOR CLUSTER TOOL

Organization Name

Applied Materials, Inc.

Inventor(s)

Songjae Lee of San Jose CA (US)

Masato Ishii of Sunnyvale CA (US)

Martin Truemper of Austin TX (US)

Richard O. Collins of Santa Clara CA (US)

Martin Jeffrey Salinas of San Jose CA (US)

Yong Zheng of Dublin CA (US)

Anita Zhao of Sunnyvale CA (US)

Adele Mariadass of Reno NV (US)

Christophe Marcadal of Santa Clara CA (US)

Henry Barandica of San Jose CA (US)

Ernesto J. Ulloa of San Jose CA (US)

PLASMA PRECLEAN SYSTEM FOR CLUSTER TOOL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17836657 titled 'PLASMA PRECLEAN SYSTEM FOR CLUSTER TOOL

Simplified Explanation

The abstract describes a plasma processing system used for cleaning a substrate. The system includes a process chamber with a substrate support and a vacuum pump. There are two exhaust lines connected between the process chamber and the vacuum pump, providing alternative paths for exhaust. The first exhaust line has a smaller internal diameter compared to the second exhaust line.

• The plasma processing system is designed for cleaning substrates.
• It includes a process chamber with a substrate support.
• The system utilizes a vacuum pump for exhaust.
• There are two exhaust lines connecting the process chamber and the vacuum pump.
• The first exhaust line has a smaller internal diameter than the second exhaust line.

Potential Applications

• Semiconductor manufacturing
• Thin film deposition
• Surface cleaning and etching processes

Problems Solved

• Efficient exhaust of gases and byproducts during plasma processing
• Controlling the flow and pressure within the process chamber

Benefits

• Improved cleaning and processing efficiency
• Enhanced control over exhaust flow and pressure
• Potential for higher quality and more precise plasma processing

Original Abstract Submitted

A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.