17835988. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ying-Chih Chen of Hsinchu County (TW)

Blanka Magyari-kope of Hsinchu County (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835988 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that consists of three layers: a first electrode layer, a ferroelectric layer, and a second electrode layer. The ferroelectric layer is made up of a ferroelectric material that is doped with two different dopants, one of which is cerium. This layer is positioned between the two electrode layers.

  • The ferroelectric layer in the semiconductor device is doped with cerium and another dopant, which enhances its properties and performance.
  • The use of cerium as a dopant in the ferroelectric material improves the functionality of the semiconductor device.
  • The ferroelectric layer is sandwiched between two electrode layers, providing a structure that can be utilized in various electronic applications.

Potential Applications

  • Memory devices: The semiconductor device can be used in non-volatile memory applications, such as ferroelectric random-access memory (FeRAM) or ferroelectric field-effect transistors (FeFETs).
  • Sensors: The device can be employed in sensors that require high sensitivity and stability, such as pressure sensors or temperature sensors.
  • Energy storage: The ferroelectric layer can be utilized in energy storage devices, such as capacitors or batteries, due to its ability to retain charge.

Problems Solved

  • Enhanced performance: The use of cerium and another dopant in the ferroelectric layer improves the functionality and performance of the semiconductor device.
  • Stability: The ferroelectric layer provides stability to the device, allowing it to retain its properties over time.
  • Compatibility: The device can be integrated into existing electronic systems and circuits due to its compatibility with standard semiconductor fabrication processes.

Benefits

  • Improved functionality: The doping of the ferroelectric layer with cerium and another dopant enhances the performance and functionality of the semiconductor device.
  • Versatility: The device can be utilized in various electronic applications, including memory devices, sensors, and energy storage.
  • Compatibility: The semiconductor device can be easily integrated into existing electronic systems and circuits, making it a practical solution for different industries.


Original Abstract Submitted

A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disposed between the first electrode layer and the second electrode layer.

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