17835924. GRAPHENE-METAL HYBRID INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
GRAPHENE-METAL HYBRID INTERCONNECT
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsuan-Ming Huang of Hsinchu (TW)
Hsin-Chun Chang of Taipei (TW)
GRAPHENE-METAL HYBRID INTERCONNECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17835924 titled 'GRAPHENE-METAL HYBRID INTERCONNECT
Simplified Explanation
The abstract describes a patent application related to improving the performance of interconnects in integrated circuits by leveraging the material properties of graphene. The application proposes different methods for incorporating graphene into the bulk metal layer of interconnects to create a hybrid metal/graphene structure.
- The first method involves alternating the metal fill process with graphene deposition to create a composite graphene matrix within a copper damascene layer.
- The second method suggests implanting carbon atoms into a surface layer of metal to embed graphene.
- The third method involves dispersing graphene flakes in a damascene copper plating solution to create a distributed graphene matrix.
These methods can be used individually or in combination to enhance the conductivity of interconnects.
Potential Applications
- Improved performance of interconnects in integrated circuits.
- Enhanced conductivity in electronic devices.
Problems Solved
- Challenges in depositing graphene onto a copper surface.
- Enhancing the conductivity of interconnects.
Benefits
- Improved performance and efficiency of integrated circuits.
- Enhanced conductivity leads to faster data transfer and reduced power consumption.
Original Abstract Submitted
Material properties of graphene can be leveraged to improve performance of interconnects in an integrated circuit. One way to circumvent challenges involved in depositing graphene onto a copper surface is to incorporate graphene into the bulk metal layer to create a hybrid metal/graphene interconnect structure. Such a hybrid structure can be created instead of, or in addition to, forming a graphene film on the metal surface as a metal capping layer. A first method for embedding graphene into a copper damascene layer is to alternate the metal fill process with graphene deposition to create a composite graphene matrix. A second method is to implant carbon atoms into a surface layer of metal. A third method is to disperse graphene flakes in a damascene copper plating solution to create a distributed graphene matrix. Any combination of these methods can be used to enhance conductivity of the interconnect.
